BAV103-GS08 Prissætning (USD) [2587754stk Lager]
- 1 pcs$0.01429
- 2,500 pcs$0.01377
- 5,000 pcs$0.01242
- 12,500 pcs$0.01080
- 25,000 pcs$0.00972
- 62,500 pcs$0.00864
- 125,000 pcs$0.00720
- Varenummer:
- BAV103-GS08
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 200V 250MA SOD80. Diodes - General Purpose, Power, Switching 1.0 Amp 250 Volt
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - FET'er, MOSFET'er - RF, Transistorer - FET'er, MOSFET'er - Arrays, Transistorer - IGBT'er - Arrays, Dioder - RF, Dioder - Variabel Kapacitans (Varicaps, Varactors), Dioder - Rectifiers - Single, Transistorer - Bipolar (BJT) - Single, Pre-Biased and Transistorer - Bipolar (BJT) - Arrays, Pre-Biased ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division BAV103-GS08 elektroniske komponenter. BAV103-GS08 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til BAV103-GS08, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
BAV103-GS08 Produktegenskaber
Varenummer :
BAV103-GS08
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 200V 250MA SOD80
Serie :
Automotive, AEC-Q101
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
200V
Nuværende - Gennemsnitlig Rectified (Io) :
250mA (DC)
Spænding - Videresend (Vf) (Max) @ Hvis :
1V @ 100mA
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Nuværende - Reverse Lækage @ Vr :
100nA @ 200V
Kapacitans @ Vr, F :
1.5pF @ 0V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
DO-213AC, MINI-MELF, SOD-80
Leverandør Device Package :
SOD-80 MiniMELF
Driftstemperatur - Junction :
175°C (Max)
Seneste nyt
Du kan også være interesseret i
-
1SS294,LF
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 40V 100MA SMINI. Schottky Diodes & Rectifiers SS Schottky 45Vrm 40V VR 300mA
-
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA
-
BAT54T
ON Semiconductor
DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE
-
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode
-
BAS116E6433HTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
-
BAS16WH6327XTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT323. Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR
Varme dele
- MBR1645-10HE3/45
- D251K12BXPSA1
- JTXM19500/469-05
- UF1503S-B
- SB05-05C-M-TB-E
- LS412060
- FR204TA
- JANTX1N6661US
- RGP10K-M3/73
- GP10G-4004E-M3/73
- RU 3AM
- RF 1A
- SD24145
- JANTXV1N5802
- MBRB1050HE3/45
- HER604-TP
- SS1H10HE3/61T
- S5MHE3/57T
- ESH2PD-E3/84A
- SS8PH9HM3/87A
- SS2P3-E3/85A
- SS1H10HE3/5AT
- SS19-E3/5AT
- GP30KHE3/54
- GP20B-E3/54
- EGP20DHE3/73
- STPS1545R
- STTH3002G
- LSM345JE3
- ES2A-TP
- VS-HFA16TB120PBF
- VS-1N5819
- 241NQ045R
- 1N6630
- RL103-AP
- ER303-AP
- RO 2CV1
- RU 3AV1
- S10MC M6G
- ES3A M6G