BAS16WH6327XTSA1 Prissætning (USD) [3792433stk Lager]
- 1 pcs$0.01320
- 3,000 pcs$0.01313
- Varenummer:
- BAS16WH6327XTSA1
- Fabrikant:
- Infineon Technologies
- Detaljeret beskrivelse:
- DIODE GEN PURP 80V 250MA SOT323. Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - RF, Thyristorer - DIAC'er, SIDAC'er, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased, Transistorer - JFET'er, Thyristorer - SCR'er - Moduler, Dioder - Rectifiers - Single, Power Driver Modules and Thyristorer - TRIACs ...
- Konkurrencefordel:
- Vi er specialiserede i Infineon Technologies BAS16WH6327XTSA1 elektroniske komponenter. BAS16WH6327XTSA1 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til BAS16WH6327XTSA1, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
BAS16WH6327XTSA1 Produktegenskaber
Varenummer :
BAS16WH6327XTSA1
Fabrikant :
Infineon Technologies
Beskrivelse :
DIODE GEN PURP 80V 250MA SOT323
Serie :
-
Del Status :
Last Time Buy
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
80V
Nuværende - Gennemsnitlig Rectified (Io) :
250mA (DC)
Spænding - Videresend (Vf) (Max) @ Hvis :
1.25V @ 150mA
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
4ns
Nuværende - Reverse Lækage @ Vr :
1µA @ 75V
Kapacitans @ Vr, F :
2pF @ 0V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
SC-70, SOT-323
Leverandør Device Package :
PG-SOT323-3
Driftstemperatur - Junction :
150°C (Max)
Seneste nyt
Du kan også være interesseret i
-
BAL74E6327HTSA1
Infineon Technologies
DIODE GEN PURP 50V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Switch Diode 250mA
-
BAT54T
ON Semiconductor
DIODE SCHOTTKY 30V 200MA SOT523. Schottky Diodes & Rectifiers 0.2A,30V,Surf Mt SCHOTTKY Barr DIODE
-
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23. Diodes - General Purpose, Power, Switching Silicon Switch Diode
-
BAS116E6433HTMA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
-
-
BAL99E6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Tuning Diode
Varme dele
- APT10SCE120B
- MBR3100VP-G1
- FR206TA
- CMR3U-04 BK
- CMR3U-01 BK
- VS-18TQ035SPBF
- BAY80-TAP
- SS3H10HE3_A/H
- VS-6TQ035STRRPBF
- BAS1602WH6327XTSA1
- APT20SCD120B
- MBRF750HE3/45
- STPS30SM60D
- S5JHE3/9AT
- 1N3743G R G
- SR304-T-F
- GPP60D-E3/54
- 20ETF12FP
- DGP30HE3/54
- S3520
- MX1H5615
- MA3X028TAL
- USD245
- D6025L
- RK 14V1
- STTH8L06DIRG
- 1N5293UR-1
- 1N4002RL
- 20ETF02STRR
- UF4007 TR
- BY329-1200,127
- S1G-F
- 1F1-TP
- UF5406-AP
- 1N649UR-1
- FESF16HTHE3/45
- FES8AT-E3/45
- RP 3FV4
- RFN5BM2SFHTL
- BAS283-GS18