BAS116E6433HTMA1 Prissætning (USD) [3737866stk Lager]
- 1 pcs$0.01160
- 10,000 pcs$0.01154
- Varenummer:
- BAS116E6433HTMA1
- Fabrikant:
- Infineon Technologies
- Detaljeret beskrivelse:
- DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - IGBT'er - Single, Transistorer - Programmerbar Unijunction, Transistorer - IGBT'er - Arrays, Transistorer - FET'er, MOSFET'er - Arrays, Transistorer - FET'er, MOSFET'er - Single, Transistorer - JFET'er, Transistorer - IGBT'er - Moduler and Transistorer - Bipolar (BJT) - Single, Pre-Biased ...
- Konkurrencefordel:
- Vi er specialiserede i Infineon Technologies BAS116E6433HTMA1 elektroniske komponenter. BAS116E6433HTMA1 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til BAS116E6433HTMA1, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
BAS116E6433HTMA1 Produktegenskaber
Varenummer :
BAS116E6433HTMA1
Fabrikant :
Infineon Technologies
Beskrivelse :
DIODE GEN PURP 80V 250MA SOT23-3
Serie :
-
Del Status :
Last Time Buy
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
80V
Nuværende - Gennemsnitlig Rectified (Io) :
250mA (DC)
Spænding - Videresend (Vf) (Max) @ Hvis :
1.25V @ 150mA
Hastighed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
1.5µs
Nuværende - Reverse Lækage @ Vr :
5nA @ 75V
Kapacitans @ Vr, F :
2pF @ 0V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
TO-236-3, SC-59, SOT-23-3
Leverandør Device Package :
SOT-23-3
Driftstemperatur - Junction :
150°C (Max)
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