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- Varenummer:
- JAN1N6622US
- Fabrikant:
- Microsemi Corporation
- Detaljeret beskrivelse:
- DIODE GEN PURP 660V 2A D5A. Rectifiers Rectifier
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Dioder - Zener - Single, Transistorer - Bipolar (BJT) - Single, Transistorer - IGBT'er - Moduler, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased, Transistorer - Programmerbar Unijunction, Dioder - Bridge Rectifiers, Transistorer - FET'er, MOSFET'er - RF and Transistorer - IGBT'er - Single ...
- Konkurrencefordel:
- Vi er specialiserede i Microsemi Corporation JAN1N6622US elektroniske komponenter. JAN1N6622US kan sendes inden for 24 timer efter bestilling. Hvis du har krav til JAN1N6622US, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
JAN1N6622US Produktegenskaber
Varenummer :
JAN1N6622US
Fabrikant :
Microsemi Corporation
Beskrivelse :
DIODE GEN PURP 660V 2A D5A
Serie :
Military, MIL-PRF-19500/585
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
660V
Nuværende - Gennemsnitlig Rectified (Io) :
1.2A
Spænding - Videresend (Vf) (Max) @ Hvis :
1.4V @ 1.2A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
30ns
Nuværende - Reverse Lækage @ Vr :
500nA @ 660V
Kapacitans @ Vr, F :
10pF @ 10V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
SQ-MELF, A
Leverandør Device Package :
D-5A
Driftstemperatur - Junction :
-65°C ~ 150°C
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