Varenummer :
BSZ0910NDXTMA1
Fabrikant :
Infineon Technologies
Beskrivelse :
DIFFERENTIATED MOSFETS
FET Type :
2 N-Channel (Dual)
FET-funktion :
Logic Level Gate, 4.5V Drive
Afløb til Source Voltage (VDSS) :
30V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5.6nC @ 4.5V
Inputkapacitans (Ciss) (Max) @ Vds :
800pF @ 15V
Strøm - Max :
1.9W (Ta), 31W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / tilfælde :
8-PowerVDFN
Leverandør Device Package :
PG-WISON-8