BAS20-HE3-18 Prissætning (USD) [2884683stk Lager]
- 1 pcs$0.01282
- 10,000 pcs$0.01186
- Varenummer:
- BAS20-HE3-18
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 150V 200MA SOT23. Diodes - General Purpose, Power, Switching 200 Volt 625mA 50ns
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Særligt formål, Transistorer - Bipolar (BJT) - Single, Transistorer - IGBT'er - Arrays, Transistorer - Programmerbar Unijunction, Dioder - Rectifiers - Arrays, Transistorer - IGBT'er - Moduler, Transistorer - Bipolar (BJT) - Single, Pre-Biased and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division BAS20-HE3-18 elektroniske komponenter. BAS20-HE3-18 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til BAS20-HE3-18, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
BAS20-HE3-18 Produktegenskaber
Varenummer :
BAS20-HE3-18
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 150V 200MA SOT23
Serie :
Automotive, AEC-Q101
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
150V
Nuværende - Gennemsnitlig Rectified (Io) :
200mA
Spænding - Videresend (Vf) (Max) @ Hvis :
1.25V @ 200mA
Hastighed :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
50ns
Nuværende - Reverse Lækage @ Vr :
100nA @ 150V
Kapacitans @ Vr, F :
5pF @ 0V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
TO-236-3, SC-59, SOT-23-3
Leverandør Device Package :
SOT-23
Driftstemperatur - Junction :
-55°C ~ 150°C
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