Varenummer :
SCT3022KLGC11
Fabrikant :
Rohm Semiconductor
Beskrivelse :
SCT3022KL IS AN SIC SILICON CAR
Teknologi :
SiCFET (Silicon Carbide)
Afløb til Source Voltage (VDSS) :
1200V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
95A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
28.6 mOhm @ 36A, 18V
Vgs (th) (Max) @ Id :
5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs :
178nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
2879pF @ 800V
Power Dissipation (Max) :
427W
Driftstemperatur :
175°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
TO-247N
Pakke / tilfælde :
TO-247-3