Beskrivelse :
GAN TRANS SYMMETRICAL HALF BRIDG
FET Type :
2 N-Channel (Half Bridge)
FET-funktion :
GaNFET (Gallium Nitride)
Afløb til Source Voltage (VDSS) :
100V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
23A
Rds On (Max) @ Id, Vgs :
6.3 mOhm @ 20A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs :
7nC @ 5V
Inputkapacitans (Ciss) (Max) @ Vds :
800pF @ 50V
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
Die