Diodes Incorporated - DMN3031LSS-13

KEY Part #: K6407633

[8609stk Lager]

Varenummer:: DMN3031LSS-13

Fabrikant:: Diodes Incorporated

Detaljeret beskrivelse:: MOSFET N-CH 30V 9A 8SOP.

Producentens standard ledetid:: På lager

Opbevaringstid:: Et år

Chip fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåde:

Familiekategorier:: KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Dioder - Variabel Kapacitans (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Arrays, Thyristorer - SCR'er - Moduler, Transistorer - JFET'er, Thyristorer - DIAC'er, SIDAC'er, Transistorer - Bipolar (BJT) - Single, Dioder - Zener - Single and Dioder - Bridge Rectifiers ...

Konkurrencefordel:: Vi er specialiserede i Diodes Incorporated DMN3031LSS-13 elektroniske komponenter. DMN3031LSS-13 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til DMN3031LSS-13, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

DMN3031LSS-13 Produktegenskaber

Varenummer : DMN3031LSS-13

Fabrikant : Diodes Incorporated

Beskrivelse : MOSFET N-CH 30V 9A 8SOP

Serie : -

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 9A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 18.5 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 741pF @ 15V

FET-funktion : -

Power Dissipation (Max) : 2.5W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : 8-SOP

Pakke / tilfælde : 8-SOIC (0.154", 3.90mm Width)

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