Varenummer :
SI4686DY-T1-GE3
Fabrikant :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 30V 18.2A 8-SOIC
Serie :
TrenchFET®, WFET®
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
30V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
18.2A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 13.8A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
1220pF @ 15V
Power Dissipation (Max) :
3W (Ta), 5.2W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
8-SO
Pakke / tilfælde :
8-SOIC (0.154", 3.90mm Width)