IXYS - IXFV110N10PS

KEY Part #: K6408851

[485stk Lager]

Varenummer:: IXFV110N10PS

Fabrikant:: IXYS

Detaljeret beskrivelse:: MOSFET N-CH 100V 110A PLUS220-S.

Producentens standard ledetid:: På lager

Opbevaringstid:: Et år

Chip fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåde:

Familiekategorier:: KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Power Driver Modules, Thyristorer - DIAC'er, SIDAC'er, Dioder - Rectifiers - Single, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Transistorer - FET'er, MOSFET'er - Single, Transistorer - Bipolar (BJT) - Arrays, Dioder - Bridge Rectifiers and Transistorer - FET'er, MOSFET'er - RF ...

Konkurrencefordel:: Vi er specialiserede i IXYS IXFV110N10PS elektroniske komponenter. IXFV110N10PS kan sendes inden for 24 timer efter bestilling. Hvis du har krav til IXFV110N10PS, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

IXFV110N10PS Produktegenskaber

Varenummer : IXFV110N10PS

Fabrikant : IXYS

Beskrivelse : MOSFET N-CH 100V 110A PLUS220-S

Serie : PolarHT™ HiPerFET™

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 100V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 110A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 15 mOhm @ 500mA, 10V

Vgs (th) (Max) @ Id : 5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 3550pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 480W (Tc)

Driftstemperatur : -55°C ~ 175°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : PLUS-220SMD

Pakke / tilfælde : PLUS-220SMD

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