IXYS - IXFH23N80Q

KEY Part #: K6409234

IXFH23N80Q Prissætning (USD) [6887stk Lager]

1 pcs$6.61565
30 pcs$6.58274

Varenummer:: IXFH23N80Q

Fabrikant:: IXYS

Detaljeret beskrivelse:: MOSFET N-CH 800V 23A TO-247.

Producentens standard ledetid:: På lager

Opbevaringstid:: Et år

Chip fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåde:

Familiekategorier:: KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - Single, Pre-Biased, Transistorer - Bipolar (BJT) - Single, Dioder - Zener - Single, Transistorer - Bipolar (BJT) - Arrays, Dioder - Variabel Kapacitans (Varicaps, Varactors), Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT'er - Moduler and Thyristorer - SCR'er ...

Konkurrencefordel:: Vi er specialiserede i IXYS IXFH23N80Q elektroniske komponenter. IXFH23N80Q kan sendes inden for 24 timer efter bestilling. Hvis du har krav til IXFH23N80Q, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

IXFH23N80Q Produktegenskaber

Varenummer : IXFH23N80Q

Fabrikant : IXYS

Beskrivelse : MOSFET N-CH 800V 23A TO-247

Serie : HiPerFET™

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 800V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 23A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 420 mOhm @ 500mA, 10V

Vgs (th) (Max) @ Id : 4.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs : 130nC @ 10V

Vgs (Max) : ±30V

Inputkapacitans (Ciss) (Max) @ Vds : 4900pF @ 25V

FET-funktion : -

Power Dissipation (Max) : 500W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Through Hole

Leverandør Device Package : TO-247AD (IXFH)

Pakke / tilfælde : TO-247-3

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