Varenummer :
IPI60R250CPAKSA1
Fabrikant :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 650V 12A TO-262
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
650V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
12A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
250 mOhm @ 7.8A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
1200pF @ 100V
Power Dissipation (Max) :
104W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
PG-TO262-3
Pakke / tilfælde :
TO-262-3 Long Leads, I²Pak, TO-262AA