Varenummer :
TK6A60W,S4VX
Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N CH 600V 6.2A TO-220SIS
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
600V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
6.2A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
750 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 310µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
390pF @ 300V
FET-funktion :
Super Junction
Power Dissipation (Max) :
30W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
TO-220SIS
Pakke / tilfælde :
TO-220-3 Full Pack