BAW27-TR Prissætning (USD) [3340050stk Lager]
- 1 pcs$0.01107
- 50,000 pcs$0.00930
- Varenummer:
- BAW27-TR
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 60V 600MA DO35. Diodes - General Purpose, Power, Switching 75 Volt 200mA 4.0 Amp IFSM
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - Single, Pre-Biased, Transistorer - Programmerbar Unijunction, Transistorer - FET'er, MOSFET'er - RF, Dioder - Bridge Rectifiers, Thyristorer - SCR'er, Transistorer - FET'er, MOSFET'er - Single, Transistorer - IGBT'er - Arrays and Thyristorer - DIAC'er, SIDAC'er ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division BAW27-TR elektroniske komponenter. BAW27-TR kan sendes inden for 24 timer efter bestilling. Hvis du har krav til BAW27-TR, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
BAW27-TR Produktegenskaber
Varenummer :
BAW27-TR
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 60V 600MA DO35
Serie :
Automotive, AEC-Q101
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
60V
Nuværende - Gennemsnitlig Rectified (Io) :
600mA (DC)
Spænding - Videresend (Vf) (Max) @ Hvis :
1.25V @ 400mA
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
6ns
Nuværende - Reverse Lækage @ Vr :
100nA @ 60V
Kapacitans @ Vr, F :
4pF @ 0V, 1MHz
Monteringstype :
Through Hole
Pakke / tilfælde :
DO-204AH, DO-35, Axial
Leverandør Device Package :
DO-35
Driftstemperatur - Junction :
175°C (Max)
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