VS-1EFH02HM3/I Prissætning (USD) [792956stk Lager]
- 1 pcs$0.04665
- 10,000 pcs$0.04227
- 30,000 pcs$0.03887
- Varenummer:
- VS-1EFH02HM3/I
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 200V 1A DO219AB. Rectifiers Hypfst Rct 1A 200V
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Power Driver Modules, Transistorer - Bipolar (BJT) - Single, Transistorer - JFET'er, Thyristorer - SCR'er, Transistorer - FET'er, MOSFET'er - Arrays, Transistorer - IGBT'er - Moduler, Transistorer - FET'er, MOSFET'er - RF and Dioder - RF ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division VS-1EFH02HM3/I elektroniske komponenter. VS-1EFH02HM3/I kan sendes inden for 24 timer efter bestilling. Hvis du har krav til VS-1EFH02HM3/I, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
VS-1EFH02HM3/I Produktegenskaber
Varenummer :
VS-1EFH02HM3/I
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 200V 1A DO219AB
Serie :
Automotive, AEC-Q101, FRED Pt®
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
200V
Nuværende - Gennemsnitlig Rectified (Io) :
1A
Spænding - Videresend (Vf) (Max) @ Hvis :
930mV @ 1A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
25ns
Nuværende - Reverse Lækage @ Vr :
2µA @ 200V
Kapacitans @ Vr, F :
-
Monteringstype :
Surface Mount
Pakke / tilfælde :
DO-219AB
Leverandør Device Package :
DO-219AB (SMF)
Driftstemperatur - Junction :
-55°C ~ 175°C
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