Varenummer :
TPN1R603PL,L1Q
Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
X35 PB-F POWER MOSFET TRANSISTOR
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
30V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
80A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.6 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
3900pF @ 15V
Power Dissipation (Max) :
104W (Tc)
Monteringstype :
Surface Mount
Leverandør Device Package :
8-TSON Advance (3.3x3.3)
Pakke / tilfælde :
8-PowerVDFN