Fabrikant :
ON Semiconductor
Beskrivelse :
INTEGRATED CIRCUIT
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
30V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
18A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.2 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
112nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
4615pF @ 15V
Power Dissipation (Max) :
2.5W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
8-SOIC
Pakke / tilfælde :
8-SOIC (0.154", 3.90mm Width)