Fabrikant :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 50V 1.7A 4-DIP
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
50V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
1.7A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
200 mOhm @ 860mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
250pF @ 25V
Power Dissipation (Max) :
1W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
4-DIP, Hexdip, HVMDIP
Pakke / tilfælde :
4-DIP (0.300", 7.62mm)