Varenummer :
IPU80R1K4P7AKMA1
Fabrikant :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 800V 4A IPAK
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
800V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
4A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 1.4A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
10.05nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
250pF @ 500V
FET-funktion :
Super Junction
Power Dissipation (Max) :
32W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
PG-TO251-3
Pakke / tilfælde :
TO-251-3 Short Leads, IPak, TO-251AA