Varenummer :
TJ10S04M3L(T6L1,NQ
Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET P-CH 40V 10A DPAK-3
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
40V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
10A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
44 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
930pF @ 10V
Power Dissipation (Max) :
27W (Tc)
Driftstemperatur :
175°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
DPAK+
Pakke / tilfælde :
TO-252-3, DPak (2 Leads + Tab), SC-63