RFUH10NS4STL Prissætning (USD) [127997stk Lager]
- 1 pcs$0.31946
- 1,000 pcs$0.31787
- 2,000 pcs$0.29668
- 5,000 pcs$0.28185
- Varenummer:
- RFUH10NS4STL
- Fabrikant:
- Rohm Semiconductor
- Detaljeret beskrivelse:
- DIODE GEN PURP 430V 10A LPDS. Diodes - General Purpose, Power, Switching 430V Vrm 10A Io Recovery Diode
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - Arrays, Thyristorer - DIAC'er, SIDAC'er, Transistorer - FET'er, MOSFET'er - Arrays, Dioder - Bridge Rectifiers, Transistorer - Bipolar (BJT) - Single, Dioder - Zener - Single, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased and Thyristorer - TRIACs ...
- Konkurrencefordel:
- Vi er specialiserede i Rohm Semiconductor RFUH10NS4STL elektroniske komponenter. RFUH10NS4STL kan sendes inden for 24 timer efter bestilling. Hvis du har krav til RFUH10NS4STL, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
RFUH10NS4STL Produktegenskaber
Varenummer :
RFUH10NS4STL
Fabrikant :
Rohm Semiconductor
Beskrivelse :
DIODE GEN PURP 430V 10A LPDS
Serie :
-
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
430V
Nuværende - Gennemsnitlig Rectified (Io) :
10A
Spænding - Videresend (Vf) (Max) @ Hvis :
1.7V @ 10A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
25ns
Nuværende - Reverse Lækage @ Vr :
10µA @ 430V
Kapacitans @ Vr, F :
-
Monteringstype :
Surface Mount
Pakke / tilfælde :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandør Device Package :
LPDS
Driftstemperatur - Junction :
150°C (Max)
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