Fabrikant :
ON Semiconductor
Beskrivelse :
INTEGRATED CIRCUIT
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
60V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
3A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
150 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
732pF @ 30V
Power Dissipation (Max) :
2.5W (Ta)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
8-SOIC
Pakke / tilfælde :
8-SOIC (0.154", 3.90mm Width)