Diodes Incorporated - ZXMN2A01E6TC

KEY Part #: K6411070

[13918stk Lager]

Varenummer:: ZXMN2A01E6TC

Fabrikant:: Diodes Incorporated

Detaljeret beskrivelse:: MOSFET N-CH 20V 2.5A SOT23-6.

Producentens standard ledetid:: På lager

Opbevaringstid:: Et år

Chip fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåde:

Familiekategorier:: KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Power Driver Modules, Transistorer - FET'er, MOSFET'er - RF, Transistorer - IGBT'er - Arrays, Transistorer - Bipolar (BJT) - Arrays, Dioder - Bridge Rectifiers, Transistorer - Særligt formål, Transistorer - Bipolar (BJT) - Single and Transistorer - Bipolar (BJT) - RF ...

Konkurrencefordel:: Vi er specialiserede i Diodes Incorporated ZXMN2A01E6TC elektroniske komponenter. ZXMN2A01E6TC kan sendes inden for 24 timer efter bestilling. Hvis du har krav til ZXMN2A01E6TC, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

ZXMN2A01E6TC Produktegenskaber

Varenummer : ZXMN2A01E6TC

Fabrikant : Diodes Incorporated

Beskrivelse : MOSFET N-CH 20V 2.5A SOT23-6

Serie : -

Del Status : Obsolete

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 20V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 2.5A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 2.5V, 4.5V

Rds On (Max) @ Id, Vgs : 120 mOhm @ 4A, 4.5V

Vgs (th) (Max) @ Id : 700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 3nC @ 4.5V

Vgs (Max) : ±12V

Inputkapacitans (Ciss) (Max) @ Vds : 303pF @ 15V

FET-funktion : -

Power Dissipation (Max) : 1.1W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : SOT-23-6

Pakke / tilfælde : SOT-23-6

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