Vishay Semiconductor Diodes Division - B125C800G-E4/51

KEY Part #: K6539912

B125C800G-E4/51 Prissætning (USD) [308641stk Lager]

  • 1 pcs$0.11984
  • 3,000 pcs$0.09916

Varenummer:
B125C800G-E4/51
Fabrikant:
Vishay Semiconductor Diodes Division
Detaljeret beskrivelse:
BRIDGE RECT 1P 200V 900MA WOG. Bridge Rectifiers 0.9 Amp 200 Volt
Producentens standard ledetid:
På lager
Opbevaringstid:
Et år
Chip fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåde:
Familiekategorier:
KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - IGBT'er - Single, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET'er, MOSFET'er - Arrays, Dioder - RF, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Thyristorer - SCR'er, Transistorer - FET'er, MOSFET'er - RF and Dioder - Zener - Single ...
Konkurrencefordel:
Vi er specialiserede i Vishay Semiconductor Diodes Division B125C800G-E4/51 elektroniske komponenter. B125C800G-E4/51 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til B125C800G-E4/51, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

B125C800G-E4/51 Produktegenskaber

Varenummer : B125C800G-E4/51
Fabrikant : Vishay Semiconductor Diodes Division
Beskrivelse : BRIDGE RECT 1P 200V 900MA WOG
Serie : -
Del Status : Active
Diodetype : Single Phase
Teknologi : Standard
Spænding - Peak Reverse (Max) : 200V
Nuværende - Gennemsnitlig Rectified (Io) : 900mA
Spænding - Videresend (Vf) (Max) @ Hvis : 1V @ 900mA
Nuværende - Reverse Lækage @ Vr : 10µA @ 200V
Driftstemperatur : -40°C ~ 125°C (TJ)
Monteringstype : Through Hole
Pakke / tilfælde : 4-Circular, WOG
Leverandør Device Package : WOG

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