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- Varenummer:
- FEP16JT-5410HE3/45
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE ARRAY GP TO220AB.
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Dioder - Variabel Kapacitans (Varicaps, Varactors), Transistorer - FET'er, MOSFET'er - Single, Dioder - Rectifiers - Single, Thyristorer - SCR'er - Moduler, Transistorer - FET'er, MOSFET'er - Arrays, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Thyristorer - TRIACs and Transistorer - IGBT'er - Moduler ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division FEP16JT-5410HE3/45 elektroniske komponenter. FEP16JT-5410HE3/45 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til FEP16JT-5410HE3/45, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
FEP16JT-5410HE3/45 Produktegenskaber
Varenummer :
FEP16JT-5410HE3/45
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE ARRAY GP TO220AB
Serie :
Automotive, AEC-Q101
Del Status :
Obsolete
Diode Konfiguration :
1 Pair Common Cathode
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
600V
Nuværende - Gennemsnitlig Rectified (Io) (pr. Diode) :
16A
Spænding - Videresend (Vf) (Max) @ Hvis :
1.3V @ 8A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Nuværende - Reverse Lækage @ Vr :
10µA @ 600V
Driftstemperatur - Junction :
-55°C ~ 150°C
Monteringstype :
Through Hole
Pakke / tilfælde :
TO-220-3
Leverandør Device Package :
TO-220AB
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