Taiwan Semiconductor Corporation - TSM089N08LCR RLG

KEY Part #: K6403631

TSM089N08LCR RLG Prissætning (USD) [167085stk Lager]

1 pcs$0.22137

Varenummer:: TSM089N08LCR RLG

Fabrikant:: Taiwan Semiconductor Corporation

Detaljeret beskrivelse:: MOSFET N-CH 80V 67A 8PDFN.

Producentens standard ledetid:: På lager

Opbevaringstid:: Et år

Chip fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåde:

Familiekategorier:: KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - IGBT'er - Arrays, Transistorer - IGBT'er - Single, Thyristorer - TRIACs, Transistorer - Bipolar (BJT) - Arrays, Transistorer - Programmerbar Unijunction, Thyristorer - DIAC'er, SIDAC'er, Power Driver Modules and Thyristorer - SCR'er ...

Konkurrencefordel:: Vi er specialiserede i Taiwan Semiconductor Corporation TSM089N08LCR RLG elektroniske komponenter. TSM089N08LCR RLG kan sendes inden for 24 timer efter bestilling. Hvis du har krav til TSM089N08LCR RLG, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

TSM089N08LCR RLG Produktegenskaber

Varenummer : TSM089N08LCR RLG

Fabrikant : Taiwan Semiconductor Corporation

Beskrivelse : MOSFET N-CH 80V 67A 8PDFN

Serie : -

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 80V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 67A (Tc)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 8.9 mOhm @ 12A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 90nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 6119pF @ 40V

FET-funktion : -

Power Dissipation (Max) : 83W (Tc)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : 8-PDFN (5x6)

Pakke / tilfælde : 8-PowerTDFN

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