HS3J M6G Prissætning (USD) [973167stk Lager]
- 1 pcs$0.03801
- Varenummer:
- HS3J M6G
- Fabrikant:
- Taiwan Semiconductor Corporation
- Detaljeret beskrivelse:
- DIODE GEN PURP 600V 3A DO214AB.
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Thyristorer - TRIACs, Transistorer - Særligt formål, Thyristorer - DIAC'er, SIDAC'er, Dioder - Bridge Rectifiers, Dioder - Rectifiers - Arrays, Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Single and Transistorer - Bipolar (BJT) - Single, Pre-Biased ...
- Konkurrencefordel:
- Vi er specialiserede i Taiwan Semiconductor Corporation HS3J M6G elektroniske komponenter. HS3J M6G kan sendes inden for 24 timer efter bestilling. Hvis du har krav til HS3J M6G, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
HS3J M6G Produktegenskaber
Varenummer :
HS3J M6G
Fabrikant :
Taiwan Semiconductor Corporation
Beskrivelse :
DIODE GEN PURP 600V 3A DO214AB
Serie :
-
Del Status :
Not For New Designs
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
600V
Nuværende - Gennemsnitlig Rectified (Io) :
3A
Spænding - Videresend (Vf) (Max) @ Hvis :
1.7V @ 3A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
75ns
Nuværende - Reverse Lækage @ Vr :
10µA @ 600V
Kapacitans @ Vr, F :
50pF @ 4V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
DO-214AB, SMC
Leverandør Device Package :
DO-214AB (SMC)
Driftstemperatur - Junction :
-55°C ~ 150°C
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