RHRD660S9A Prissætning (USD) [187337stk Lager]
- 1 pcs$0.19842
- 2,500 pcs$0.19744
- 5,000 pcs$0.18804
- Varenummer:
- RHRD660S9A
- Fabrikant:
- ON Semiconductor
- Detaljeret beskrivelse:
- DIODE GEN PURP 600V 6A TO252-3. Diodes - General Purpose, Power, Switching 6A 600V HyperFast Diode
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - JFET'er, Power Driver Modules, Transistorer - IGBT'er - Single, Dioder - Zener - Single, Thyristorer - SCR'er - Moduler, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Thyristorer - DIAC'er, SIDAC'er and Transistorer - Bipolar (BJT) - RF ...
- Konkurrencefordel:
- Vi er specialiserede i ON Semiconductor RHRD660S9A elektroniske komponenter. RHRD660S9A kan sendes inden for 24 timer efter bestilling. Hvis du har krav til RHRD660S9A, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
RHRD660S9A Produktegenskaber
Varenummer :
RHRD660S9A
Fabrikant :
ON Semiconductor
Beskrivelse :
DIODE GEN PURP 600V 6A TO252-3
Serie :
-
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
600V
Nuværende - Gennemsnitlig Rectified (Io) :
6A
Spænding - Videresend (Vf) (Max) @ Hvis :
2.1V @ 6A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
35ns
Nuværende - Reverse Lækage @ Vr :
100µA @ 600V
Kapacitans @ Vr, F :
-
Monteringstype :
Surface Mount
Pakke / tilfælde :
TO-252-3, DPak (2 Leads + Tab), SC-63
Leverandør Device Package :
TO-252AA
Driftstemperatur - Junction :
-55°C ~ 175°C
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