RFN10NS6STL Prissætning (USD) [135537stk Lager]
- 1 pcs$0.30169
- 1,000 pcs$0.30018
- Varenummer:
- RFN10NS6STL
- Fabrikant:
- Rohm Semiconductor
- Detaljeret beskrivelse:
- DIODE GEN PURP 600V 10A LPDS. Diodes - General Purpose, Power, Switching Diode Switching 600V 10A
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Programmerbar Unijunction, Transistorer - IGBT'er - Moduler, Thyristorer - SCR'er, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Dioder - Bridge Rectifiers, Thyristorer - TRIACs, Thyristorer - DIAC'er, SIDAC'er and Transistorer - Bipolar (BJT) - RF ...
- Konkurrencefordel:
- Vi er specialiserede i Rohm Semiconductor RFN10NS6STL elektroniske komponenter. RFN10NS6STL kan sendes inden for 24 timer efter bestilling. Hvis du har krav til RFN10NS6STL, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
RFN10NS6STL Produktegenskaber
Varenummer :
RFN10NS6STL
Fabrikant :
Rohm Semiconductor
Beskrivelse :
DIODE GEN PURP 600V 10A LPDS
Serie :
-
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
600V
Nuværende - Gennemsnitlig Rectified (Io) :
10A
Spænding - Videresend (Vf) (Max) @ Hvis :
1.55V @ 10A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Nuværende - Reverse Lækage @ Vr :
10µA @ 600V
Kapacitans @ Vr, F :
-
Monteringstype :
Surface Mount
Pakke / tilfælde :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandør Device Package :
LPDS
Driftstemperatur - Junction :
150°C (Max)
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