NSB8JTHE3_A/I Prissætning (USD) [104538stk Lager]
- 1 pcs$0.37403
- 800 pcs$0.33139
- Varenummer:
- NSB8JTHE3_A/I
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 600V 8A TO263AB. Rectifiers 8A 600V Glass Psvtd AEC-Q101 Qualified
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - IGBT'er - Single, Transistorer - Bipolar (BJT) - Single, Thyristorer - DIAC'er, SIDAC'er, Transistorer - FET'er, MOSFET'er - Arrays, Power Driver Modules, Thyristorer - SCR'er, Dioder - Zener - Arrays and Dioder - Zener - Single ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division NSB8JTHE3_A/I elektroniske komponenter. NSB8JTHE3_A/I kan sendes inden for 24 timer efter bestilling. Hvis du har krav til NSB8JTHE3_A/I, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
NSB8JTHE3_A/I Produktegenskaber
Varenummer :
NSB8JTHE3_A/I
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 600V 8A TO263AB
Serie :
Automotive, AEC-Q101
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
600V
Nuværende - Gennemsnitlig Rectified (Io) :
8A
Spænding - Videresend (Vf) (Max) @ Hvis :
1.1V @ 8A
Hastighed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Nuværende - Reverse Lækage @ Vr :
10µA @ 600V
Kapacitans @ Vr, F :
55pF @ 4V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Leverandør Device Package :
TO-263AB
Driftstemperatur - Junction :
-55°C ~ 150°C
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