BAS16,215 Prissætning (USD) [3839138stk Lager]
- 1 pcs$0.00963
- 3,000 pcs$0.00921
- 6,000 pcs$0.00831
- 15,000 pcs$0.00723
- 30,000 pcs$0.00650
- 75,000 pcs$0.00578
- 150,000 pcs$0.00482
- Varenummer:
- BAS16,215
- Fabrikant:
- Nexperia USA Inc.
- Detaljeret beskrivelse:
- DIODE GEN PURP 100V 215MA SOT23. Diodes - General Purpose, Power, Switching SW 75V 215MA HS
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Særligt formål, Transistorer - FET'er, MOSFET'er - Single, Dioder - Rectifiers - Single, Dioder - Rectifiers - Arrays, Transistorer - JFET'er, Transistorer - Bipolar (BJT) - RF, Dioder - RF and Thyristorer - DIAC'er, SIDAC'er ...
- Konkurrencefordel:
- Vi er specialiserede i Nexperia USA Inc. BAS16,215 elektroniske komponenter. BAS16,215 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til BAS16,215, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
BAS16,215 Produktegenskaber
Varenummer :
BAS16,215
Fabrikant :
Nexperia USA Inc.
Beskrivelse :
DIODE GEN PURP 100V 215MA SOT23
Serie :
Automotive, AEC-Q101, BAS16
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
100V
Nuværende - Gennemsnitlig Rectified (Io) :
215mA (DC)
Spænding - Videresend (Vf) (Max) @ Hvis :
1.25V @ 150mA
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
4ns
Nuværende - Reverse Lækage @ Vr :
500nA @ 80V
Kapacitans @ Vr, F :
1.5pF @ 0V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
TO-236-3, SC-59, SOT-23-3
Leverandør Device Package :
TO-236AB
Driftstemperatur - Junction :
150°C (Max)
Seneste nyt
Du kan også være interesseret i
-
RGL34G-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 500MA DO213. Diodes - General Purpose, Power, Switching 400 Volt 0.5A 150ns 10 Amp IFSM
-
BYM07-300-E3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 500MA DO213. Rectifiers 300 Volt 0.5A 50ns Glass Passivated
-
BYM07-50-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 500MA DO213AA. Rectifiers 50 Volt 0.5A 50ns Glass Passivated
-
EGL34C-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 500MA DO213. Rectifiers 0.5Amp 150 Volt 50ns
-
EGL34F-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 500MA DO213. Rectifiers 0.5Amp 300 Volt 50ns
-
EGL34A-E3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 500MA DO213AA. Rectifiers 0.5 Amp 50 Volt 50ns
Varme dele
- MBR1645-10HE3/45
- D251K12BXPSA1
- JTXM19500/469-05
- UF1503S-B
- SB05-05C-M-TB-E
- LS412060
- FR204TA
- JANTX1N6661US
- RGP10K-M3/73
- GP10G-4004E-M3/73
- RU 3AM
- RF 1A
- SD24145
- JANTXV1N5802
- MBRB1050HE3/45
- HER604-TP
- SS1H10HE3/61T
- S5MHE3/57T
- ESH2PD-E3/84A
- SS8PH9HM3/87A
- SS2P3-E3/85A
- SS1H10HE3/5AT
- SS19-E3/5AT
- GP30KHE3/54
- GP20B-E3/54
- EGP20DHE3/73
- STPS1545R
- STTH3002G
- LSM345JE3
- ES2A-TP
- VS-HFA16TB120PBF
- VS-1N5819
- 241NQ045R
- 1N6630
- RL103-AP
- ER303-AP
- RO 2CV1
- RU 3AV1
- S10MC M6G
- ES3A M6G