IDC21D120T6MX1SA2 Prissætning (USD) [26568stk Lager]
- 1 pcs$1.55126
- Varenummer:
- IDC21D120T6MX1SA2
- Fabrikant:
- Infineon Technologies
- Detaljeret beskrivelse:
- DIODE GEN PURP 1.2KV 35A WAFER.
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - IGBT'er - Single, Thyristorer - SCR'er - Moduler, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT'er - Arrays, Transistorer - Programmerbar Unijunction, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Dioder - Zener - Single and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurrencefordel:
- Vi er specialiserede i Infineon Technologies IDC21D120T6MX1SA2 elektroniske komponenter. IDC21D120T6MX1SA2 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til IDC21D120T6MX1SA2, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
IDC21D120T6MX1SA2 Produktegenskaber
Varenummer :
IDC21D120T6MX1SA2
Fabrikant :
Infineon Technologies
Beskrivelse :
DIODE GEN PURP 1.2KV 35A WAFER
Serie :
-
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
1200V
Nuværende - Gennemsnitlig Rectified (Io) :
35A
Spænding - Videresend (Vf) (Max) @ Hvis :
2.05V @ 35A
Hastighed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Nuværende - Reverse Lækage @ Vr :
7.7µA @ 1200V
Kapacitans @ Vr, F :
-
Monteringstype :
Surface Mount
Pakke / tilfælde :
Die
Leverandør Device Package :
Sawn on foil
Driftstemperatur - Junction :
-40°C ~ 175°C
Seneste nyt
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