Varenummer :
TPH2900ENH,L1Q
Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 200V 33A SOP8
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
200V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
33A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
29 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
2200pF @ 100V
Power Dissipation (Max) :
78W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
8-SOP Advance (5x5)
Pakke / tilfælde :
8-PowerVDFN