RFN2LAM6STR Prissætning (USD) [493751stk Lager]
- 1 pcs$0.08281
- 3,000 pcs$0.08240
- 6,000 pcs$0.07709
- 15,000 pcs$0.07177
- Varenummer:
- RFN2LAM6STR
- Fabrikant:
- Rohm Semiconductor
- Detaljeret beskrivelse:
- DIODE GEN PURP 600V 1.5A PMDTM. Diodes - General Purpose, Power, Switching 600V Vr 1.5A Io Fast Recovery Diode
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - RF, Thyristorer - TRIACs, Transistorer - IGBT'er - Single, Dioder - Variabel Kapacitans (Varicaps, Varactors), Transistorer - IGBT'er - Arrays, Transistorer - Programmerbar Unijunction, Dioder - Zener - Arrays and Transistorer - IGBT'er - Moduler ...
- Konkurrencefordel:
- Vi er specialiserede i Rohm Semiconductor RFN2LAM6STR elektroniske komponenter. RFN2LAM6STR kan sendes inden for 24 timer efter bestilling. Hvis du har krav til RFN2LAM6STR, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
RFN2LAM6STR Produktegenskaber
Varenummer :
RFN2LAM6STR
Fabrikant :
Rohm Semiconductor
Beskrivelse :
DIODE GEN PURP 600V 1.5A PMDTM
Serie :
-
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
600V
Nuværende - Gennemsnitlig Rectified (Io) :
1.5A
Spænding - Videresend (Vf) (Max) @ Hvis :
1.55V @ 1.5A
Hastighed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
35ns
Nuværende - Reverse Lækage @ Vr :
1µA @ 600V
Kapacitans @ Vr, F :
-
Monteringstype :
Surface Mount
Pakke / tilfælde :
SOD-128
Leverandør Device Package :
PMDTM
Driftstemperatur - Junction :
150°C (Max)
Seneste nyt
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