Varenummer :
GP2M004A065PG
Fabrikant :
Global Power Technologies Group
Beskrivelse :
MOSFET N-CH 650V 4A IPAK
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
650V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
4A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.4 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
642pF @ 25V
Power Dissipation (Max) :
98.4W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
I-PAK
Pakke / tilfælde :
TO-251-3 Short Leads, IPak, TO-251AA