RN1910FE,LF(CT Prissætning (USD) [1936260stk Lager]
- 1 pcs$0.01920
- 4,000 pcs$0.01910
- 8,000 pcs$0.01661
- 12,000 pcs$0.01412
- 28,000 pcs$0.01329
- 100,000 pcs$0.01107
- Varenummer:
- RN1910FE,LF(CT
- Fabrikant:
- Toshiba Semiconductor and Storage
- Detaljeret beskrivelse:
- TRANS 2NPN PREBIAS 0.1W ES6.
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Thyristorer - SCR'er - Moduler, Transistorer - FET'er, MOSFET'er - Single, Transistorer - Programmerbar Unijunction, Dioder - Rectifiers - Single, Thyristorer - SCR'er, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Transistorer - FET'er, MOSFET'er - RF and Dioder - Variabel Kapacitans (Varicaps, Varactors) ...
- Konkurrencefordel:
- Vi er specialiserede i Toshiba Semiconductor and Storage RN1910FE,LF(CT elektroniske komponenter. RN1910FE,LF(CT kan sendes inden for 24 timer efter bestilling. Hvis du har krav til RN1910FE,LF(CT, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
RN1910FE,LF(CT Produktegenskaber
Varenummer :
RN1910FE,LF(CT
Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
TRANS 2NPN PREBIAS 0.1W ES6
Serie :
-
Del Status :
Active
Transistor Type :
2 NPN - Pre-Biased (Dual)
Nuværende - Samler (Ic) (Max) :
100mA
Spænding - Samler Emitter Opdeling (Max) :
50V
Modstand - Base (R1) :
4.7 kOhms
Modstand - Emitterbase (R2) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Mætning (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Nuværende - Collector Cutoff (Max) :
100nA (ICBO)
Frekvens - Overgang :
250MHz
Strøm - Max :
100mW
Monteringstype :
Surface Mount
Pakke / tilfælde :
SOT-563, SOT-666
Leverandør Device Package :
ES6
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