Toshiba Semiconductor and Storage - RN4987FE,LF(CT

KEY Part #: K6529280

RN4987FE,LF(CT Prissætning (USD) [1936260stk Lager]

  • 1 pcs$0.01910

Varenummer:
RN4987FE,LF(CT
Fabrikant:
Toshiba Semiconductor and Storage
Detaljeret beskrivelse:
TRANS NPN/PNP PREBIAS 0.1W ES6.
Producentens standard ledetid:
På lager
Opbevaringstid:
Et år
Chip fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåde:
Familiekategorier:
KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - Single, Pre-Biased, Transistorer - JFET'er, Transistorer - Bipolar (BJT) - Arrays, Dioder - Bridge Rectifiers, Power Driver Modules, Dioder - RF, Transistorer - IGBT'er - Single and Transistorer - Bipolar (BJT) - RF ...
Konkurrencefordel:
Vi er specialiserede i Toshiba Semiconductor and Storage RN4987FE,LF(CT elektroniske komponenter. RN4987FE,LF(CT kan sendes inden for 24 timer efter bestilling. Hvis du har krav til RN4987FE,LF(CT, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN4987FE,LF(CT Produktegenskaber

Varenummer : RN4987FE,LF(CT
Fabrikant : Toshiba Semiconductor and Storage
Beskrivelse : TRANS NPN/PNP PREBIAS 0.1W ES6
Serie : -
Del Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Nuværende - Samler (Ic) (Max) : 100mA
Spænding - Samler Emitter Opdeling (Max) : 50V
Modstand - Base (R1) : 10 kOhms
Modstand - Emitterbase (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Mætning (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Nuværende - Collector Cutoff (Max) : 500nA
Frekvens - Overgang : 250MHz, 200MHz
Strøm - Max : 100mW
Monteringstype : Surface Mount
Pakke / tilfælde : SOT-563, SOT-666
Leverandør Device Package : ES6

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