TRS6E65C,S1AQ Prissætning (USD) [15205stk Lager]
- 1 pcs$2.86009
- 50 pcs$2.84586
- Varenummer:
- TRS6E65C,S1AQ
- Fabrikant:
- Toshiba Semiconductor and Storage
- Detaljeret beskrivelse:
- DIODE SCHOTTKY 650V 6A TO220-2L.
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Transistorer - Programmerbar Unijunction, Dioder - Zener - Single, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased, Dioder - Zener - Arrays, Power Driver Modules and Dioder - RF ...
- Konkurrencefordel:
- Vi er specialiserede i Toshiba Semiconductor and Storage TRS6E65C,S1AQ elektroniske komponenter. TRS6E65C,S1AQ kan sendes inden for 24 timer efter bestilling. Hvis du har krav til TRS6E65C,S1AQ, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
TRS6E65C,S1AQ Produktegenskaber
Varenummer :
TRS6E65C,S1AQ
Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
DIODE SCHOTTKY 650V 6A TO220-2L
Serie :
-
Del Status :
Not For New Designs
Diodetype :
Silicon Carbide Schottky
Spænding - DC-omvendt (Vr) (Max) :
650V
Nuværende - Gennemsnitlig Rectified (Io) :
6A (DC)
Spænding - Videresend (Vf) (Max) @ Hvis :
1.7V @ 6A
Hastighed :
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) :
0ns
Nuværende - Reverse Lækage @ Vr :
90µA @ 650V
Kapacitans @ Vr, F :
35pF @ 650V, 1MHz
Monteringstype :
Through Hole
Pakke / tilfælde :
TO-220-2
Leverandør Device Package :
TO-220-2L
Driftstemperatur - Junction :
175°C (Max)
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