Rohm Semiconductor - RS1E350BNTB

KEY Part #: K6394137

RS1E350BNTB Prissætning (USD) [137196stk Lager]

1 pcs$0.29804
2,500 pcs$0.29656

Varenummer:: RS1E350BNTB

Fabrikant:: Rohm Semiconductor

Detaljeret beskrivelse:: MOSFET N-CH 30V 35A 8HSOP.

Producentens standard ledetid:: På lager

Opbevaringstid:: Et år

Chip fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåde:

Familiekategorier:: KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Dioder - Zener - Single, Dioder - Rectifiers - Single, Thyristorer - TRIACs, Dioder - Zener - Arrays, Transistorer - FET'er, MOSFET'er - RF, Transistorer - FET'er, MOSFET'er - Single, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased and Transistorer - Bipolar (BJT) - RF ...

Konkurrencefordel:: Vi er specialiserede i Rohm Semiconductor RS1E350BNTB elektroniske komponenter. RS1E350BNTB kan sendes inden for 24 timer efter bestilling. Hvis du har krav til RS1E350BNTB, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

RS1E350BNTB Produktegenskaber

Varenummer : RS1E350BNTB

Fabrikant : Rohm Semiconductor

Beskrivelse : MOSFET N-CH 30V 35A 8HSOP

Serie : -

Del Status : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 35A (Ta)

Drevspænding (Maks. Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.7 mOhm @ 35A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs : 185nC @ 10V

Vgs (Max) : ±20V

Inputkapacitans (Ciss) (Max) @ Vds : 7900pF @ 15V

FET-funktion : -

Power Dissipation (Max) : 35W (Tc)

Driftstemperatur : 150°C (TJ)

Monteringstype : Surface Mount

Leverandør Device Package : 8-HSOP

Pakke / tilfælde : 8-PowerTDFN

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