Taiwan Semiconductor Corporation - HS3D M6G

KEY Part #: K6458225

HS3D M6G Prissætning (USD) [973167stk Lager]

  • 1 pcs$0.03801

Varenummer:
HS3D M6G
Fabrikant:
Taiwan Semiconductor Corporation
Detaljeret beskrivelse:
DIODE GEN PURP 200V 3A DO214AB.
Producentens standard ledetid:
På lager
Opbevaringstid:
Et år
Chip fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåde:
Familiekategorier:
KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - FET'er, MOSFET'er - RF, Transistorer - Programmerbar Unijunction, Transistorer - IGBT'er - Moduler, Dioder - Rectifiers - Single, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased, Transistorer - Bipolar (BJT) - Single, Transistorer - Bipolar (BJT) - Single, Pre-Biased and Dioder - Rectifiers - Arrays ...
Konkurrencefordel:
Vi er specialiserede i Taiwan Semiconductor Corporation HS3D M6G elektroniske komponenter. HS3D M6G kan sendes inden for 24 timer efter bestilling. Hvis du har krav til HS3D M6G, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HS3D M6G Produktegenskaber

Varenummer : HS3D M6G
Fabrikant : Taiwan Semiconductor Corporation
Beskrivelse : DIODE GEN PURP 200V 3A DO214AB
Serie : -
Del Status : Not For New Designs
Diodetype : Standard
Spænding - DC-omvendt (Vr) (Max) : 200V
Nuværende - Gennemsnitlig Rectified (Io) : 3A
Spænding - Videresend (Vf) (Max) @ Hvis : 1V @ 3A
Hastighed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Nuværende - Reverse Lækage @ Vr : 10µA @ 200V
Kapacitans @ Vr, F : 80pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / tilfælde : DO-214AB, SMC
Leverandør Device Package : DO-214AB (SMC)
Driftstemperatur - Junction : -55°C ~ 150°C

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