Toshiba Semiconductor and Storage - RN2902FE,LF(CT

KEY Part #: K6529281

RN2902FE,LF(CT Prissætning (USD) [1936260stk Lager]

  • 1 pcs$0.01920
  • 4,000 pcs$0.01910

Varenummer:
RN2902FE,LF(CT
Fabrikant:
Toshiba Semiconductor and Storage
Detaljeret beskrivelse:
TRANS 2PNP PREBIAS 0.2W ES6.
Producentens standard ledetid:
På lager
Opbevaringstid:
Et år
Chip fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåde:
Familiekategorier:
KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Dioder - Bridge Rectifiers, Transistorer - FET'er, MOSFET'er - RF, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Transistorer - IGBT'er - Arrays, Transistorer - JFET'er, Dioder - Variabel Kapacitans (Varicaps, Varactors), Transistorer - Programmerbar Unijunction and Power Driver Modules ...
Konkurrencefordel:
Vi er specialiserede i Toshiba Semiconductor and Storage RN2902FE,LF(CT elektroniske komponenter. RN2902FE,LF(CT kan sendes inden for 24 timer efter bestilling. Hvis du har krav til RN2902FE,LF(CT, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN2902FE,LF(CT Produktegenskaber

Varenummer : RN2902FE,LF(CT
Fabrikant : Toshiba Semiconductor and Storage
Beskrivelse : TRANS 2PNP PREBIAS 0.2W ES6
Serie : -
Del Status : Active
Transistor Type : 2 PNP - Pre-Biased (Dual)
Nuværende - Samler (Ic) (Max) : 100mA
Spænding - Samler Emitter Opdeling (Max) : 50V
Modstand - Base (R1) : 10 kOhms
Modstand - Emitterbase (R2) : 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V
Vce Mætning (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Nuværende - Collector Cutoff (Max) : 500nA
Frekvens - Overgang : 200MHz
Strøm - Max : 200mW
Monteringstype : Surface Mount
Pakke / tilfælde : SOT-563, SOT-666
Leverandør Device Package : ES6

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