Varenummer :
TK1K9A60F,S4X
Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
PB-F POWER MOSFET TRANSISTOR TO-
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
600V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
3.7A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.9 Ohm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 400µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
490pF @ 300V
Power Dissipation (Max) :
30W (Tc)
Monteringstype :
Through Hole
Leverandør Device Package :
TO-220SIS
Pakke / tilfælde :
TO-220-3 Full Pack