Vishay Siliconix - SI4922BDY-T1-GE3

KEY Part #: K6522983

SI4922BDY-T1-GE3 Prissætning (USD) [111328stk Lager]

1 pcs$0.33224
2,500 pcs$0.31128

Varenummer:: SI4922BDY-T1-GE3

Fabrikant:: Vishay Siliconix

Detaljeret beskrivelse:: MOSFET 2N-CH 30V 8A 8-SOIC.

Producentens standard ledetid:: På lager

Opbevaringstid:: Et år

Chip fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåde:

Familiekategorier:: KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Dioder - Zener - Single, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT'er - Arrays, Thyristorer - DIAC'er, SIDAC'er, Dioder - Bridge Rectifiers, Transistorer - Bipolar (BJT) - Arrays, Dioder - Variabel Kapacitans (Varicaps, Varactors) and Transistorer - FET'er, MOSFET'er - Single ...

Konkurrencefordel:: Vi er specialiserede i Vishay Siliconix SI4922BDY-T1-GE3 elektroniske komponenter. SI4922BDY-T1-GE3 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til SI4922BDY-T1-GE3, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

SI4922BDY-T1-GE3 Produktegenskaber

Varenummer : SI4922BDY-T1-GE3

Fabrikant : Vishay Siliconix

Beskrivelse : MOSFET 2N-CH 30V 8A 8-SOIC

Serie : TrenchFET®

Del Status : Active

FET Type : 2 N-Channel (Dual)

FET-funktion : Standard

Afløb til Source Voltage (VDSS) : 30V

Strøm - Kontinuerlig afløb (Id) @ 25 ° C : 8A

Rds On (Max) @ Id, Vgs : 16 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs : 62nC @ 10V

Inputkapacitans (Ciss) (Max) @ Vds : 2070pF @ 15V

Strøm - Max : 3.1W

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Pakke / tilfælde : 8-SOIC (0.154", 3.90mm Width)

Leverandør Device Package : 8-SO

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