Fabrikant :
Rohm Semiconductor
Beskrivelse :
MOSFET N-CH 650V 29A TO-220AB
Teknologi :
SiCFET (Silicon Carbide)
Afløb til Source Voltage (VDSS) :
650V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
29A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
156 mOhm @ 10A, 18V
Vgs (th) (Max) @ Id :
4V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs :
61nC @ 18V
Inputkapacitans (Ciss) (Max) @ Vds :
1200pF @ 500V
Power Dissipation (Max) :
165W (Tc)
Driftstemperatur :
175°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
TO-220AB
Pakke / tilfælde :
TO-220-3