Varenummer :
SI4666DY-T1-GE3
Fabrikant :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 25V 16.5A 8-SOIC
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
25V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
16.5A (Tc)
Drevspænding (Maks. Rds On, Min Rds On) :
2.5V, 10V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
1145pF @ 10V
Power Dissipation (Max) :
2.5W (Ta), 5W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandør Device Package :
8-SO
Pakke / tilfælde :
8-SOIC (0.154", 3.90mm Width)