Vishay Semiconductor Diodes Division - FEP16DT-5001HE3/45

KEY Part #: K6475432

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    Varenummer:
    FEP16DT-5001HE3/45
    Fabrikant:
    Vishay Semiconductor Diodes Division
    Detaljeret beskrivelse:
    DIODE ARRAY GP TO220AB.
    Producentens standard ledetid:
    På lager
    Opbevaringstid:
    Et år
    Chip fra:
    Hong Kong
    RoHS:
    Betalingsmetode:
    Forsendelsesmåde:
    Familiekategorier:
    KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - FET'er, MOSFET'er - Arrays, Thyristorer - SCR'er, Dioder - Rectifiers - Arrays, Dioder - Rectifiers - Single, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased, Transistorer - Bipolar (BJT) - Single, Pre-Biased, Transistorer - Bipolar (BJT) - Single and Power Driver Modules ...
    Konkurrencefordel:
    Vi er specialiserede i Vishay Semiconductor Diodes Division FEP16DT-5001HE3/45 elektroniske komponenter. FEP16DT-5001HE3/45 kan sendes inden for 24 timer efter bestilling. Hvis du har krav til FEP16DT-5001HE3/45, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FEP16DT-5001HE3/45 Produktegenskaber

    Varenummer : FEP16DT-5001HE3/45
    Fabrikant : Vishay Semiconductor Diodes Division
    Beskrivelse : DIODE ARRAY GP TO220AB
    Serie : Automotive, AEC-Q101
    Del Status : Obsolete
    Diode Konfiguration : 1 Pair Common Cathode
    Diodetype : Standard
    Spænding - DC-omvendt (Vr) (Max) : 200V
    Nuværende - Gennemsnitlig Rectified (Io) (pr. Diode) : 16A
    Spænding - Videresend (Vf) (Max) @ Hvis : 1.3V @ 8A
    Hastighed : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 35ns
    Nuværende - Reverse Lækage @ Vr : 10µA @ 200V
    Driftstemperatur - Junction : -55°C ~ 150°C
    Monteringstype : Through Hole
    Pakke / tilfælde : TO-220-3
    Leverandør Device Package : TO-220AB

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