Vishay Semiconductor Diodes Division - SE20FJHM3/I

KEY Part #: K6438245

SE20FJHM3/I Prissætning (USD) [1006146stk Lager]

  • 1 pcs$0.03879
  • 20,000 pcs$0.03860

Varenummer:
SE20FJHM3/I
Fabrikant:
Vishay Semiconductor Diodes Division
Detaljeret beskrivelse:
DIODE GEN PURP 600V 1.7A DO219AB. Rectifiers 2A,600V ESD PROTECTION, SMF RECT
Producentens standard ledetid:
På lager
Opbevaringstid:
Et år
Chip fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåde:
Familiekategorier:
KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - JFET'er, Dioder - RF, Thyristorer - DIAC'er, SIDAC'er, Dioder - Zener - Single, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT'er - Arrays, Thyristorer - SCR'er and Transistorer - Programmerbar Unijunction ...
Konkurrencefordel:
Vi er specialiserede i Vishay Semiconductor Diodes Division SE20FJHM3/I elektroniske komponenter. SE20FJHM3/I kan sendes inden for 24 timer efter bestilling. Hvis du har krav til SE20FJHM3/I, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE20FJHM3/I Produktegenskaber

Varenummer : SE20FJHM3/I
Fabrikant : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 600V 1.7A DO219AB
Serie : Automotive, AEC-Q101
Del Status : Active
Diodetype : Standard
Spænding - DC-omvendt (Vr) (Max) : 600V
Nuværende - Gennemsnitlig Rectified (Io) : 1.7A
Spænding - Videresend (Vf) (Max) @ Hvis : 1.1V @ 2A
Hastighed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 920ns
Nuværende - Reverse Lækage @ Vr : 5µA @ 600V
Kapacitans @ Vr, F : 13pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / tilfælde : DO-219AB
Leverandør Device Package : DO-219AB (SMF)
Driftstemperatur - Junction : -55°C ~ 175°C

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