SE20FJHM3/I Prissætning (USD) [1006146stk Lager]
- 1 pcs$0.03879
- 20,000 pcs$0.03860
- Varenummer:
- SE20FJHM3/I
- Fabrikant:
- Vishay Semiconductor Diodes Division
- Detaljeret beskrivelse:
- DIODE GEN PURP 600V 1.7A DO219AB. Rectifiers 2A,600V ESD PROTECTION, SMF RECT
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Arrays, Dioder - Variabel Kapacitans (Varicaps, Varactors), Transistorer - JFET'er, Thyristorer - TRIACs, Transistorer - FET'er, MOSFET'er - Single, Transistorer - Bipolar (BJT) - Arrays and Transistorer - IGBT'er - Single ...
- Konkurrencefordel:
- Vi er specialiserede i Vishay Semiconductor Diodes Division SE20FJHM3/I elektroniske komponenter. SE20FJHM3/I kan sendes inden for 24 timer efter bestilling. Hvis du har krav til SE20FJHM3/I, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
SE20FJHM3/I Produktegenskaber
Varenummer :
SE20FJHM3/I
Fabrikant :
Vishay Semiconductor Diodes Division
Beskrivelse :
DIODE GEN PURP 600V 1.7A DO219AB
Serie :
Automotive, AEC-Q101
Del Status :
Active
Diodetype :
Standard
Spænding - DC-omvendt (Vr) (Max) :
600V
Nuværende - Gennemsnitlig Rectified (Io) :
1.7A
Spænding - Videresend (Vf) (Max) @ Hvis :
1.1V @ 2A
Hastighed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
920ns
Nuværende - Reverse Lækage @ Vr :
5µA @ 600V
Kapacitans @ Vr, F :
13pF @ 4V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
DO-219AB
Leverandør Device Package :
DO-219AB (SMF)
Driftstemperatur - Junction :
-55°C ~ 175°C
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