1SS367,H3F Prissætning (USD) [2710765stk Lager]
- 1 pcs$0.08701
- 10 pcs$0.08029
- 25 pcs$0.05774
- 100 pcs$0.04493
- 250 pcs$0.02822
- 500 pcs$0.02406
- 1,000 pcs$0.01636
- Varenummer:
- 1SS367,H3F
- Fabrikant:
- Toshiba Semiconductor and Storage
- Detaljeret beskrivelse:
- DIODE SCHOTTKY 10V 100MA SC76. Schottky Diodes & Rectifiers Sml-Signal Schottky Barrier Diode
- Producentens standard ledetid:
- På lager
- Opbevaringstid:
- Et år
- Chip fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåde:
- Familiekategorier:
- KEY Components Co., LTD er en distributør af elektroniske komponenter, der tilbyder produktkategorier inklusive: Transistorer - IGBT'er - Single, Transistorer - FET'er, MOSFET'er - Single, Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - RF, Dioder - Variabel Kapacitans (Varicaps, Varactors), Dioder - Zener - Single, Transistorer - Bipolar (BJT) - Arrays, Pre-Biased and Dioder - RF ...
- Konkurrencefordel:
- Vi er specialiserede i Toshiba Semiconductor and Storage 1SS367,H3F elektroniske komponenter. 1SS367,H3F kan sendes inden for 24 timer efter bestilling. Hvis du har krav til 1SS367,H3F, bedes du indsende en anmodning om tilbud her eller send os en e-mail: rfq@key-components.com
1SS367,H3F Produktegenskaber
Varenummer :
1SS367,H3F
Fabrikant :
Toshiba Semiconductor and Storage
Beskrivelse :
DIODE SCHOTTKY 10V 100MA SC76
Serie :
-
Del Status :
Active
Diodetype :
Schottky
Spænding - DC-omvendt (Vr) (Max) :
10V
Nuværende - Gennemsnitlig Rectified (Io) :
100mA
Spænding - Videresend (Vf) (Max) @ Hvis :
500mV @ 100mA
Hastighed :
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) :
-
Nuværende - Reverse Lækage @ Vr :
20µA @ 10V
Kapacitans @ Vr, F :
40pF @ 0V, 1MHz
Monteringstype :
Surface Mount
Pakke / tilfælde :
SC-76, SOD-323
Leverandør Device Package :
-
Driftstemperatur - Junction :
125°C (Max)
Seneste nyt
Du kan også være interesseret i
-
-
BAS16E6327HTSA1
Infineon Technologies
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching AF DIODE 85V 0.25A
-
-
CMDD6001 TR
Central Semiconductor Corp
DIODE GEN PURP 75V 250MA SOD323. Diodes - General Purpose, Power, Switching Ultra Low Leakage 71Vr 100Vrrm 250mA
-
VS-5EWH06FNTR-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 5A DPAK. Rectifiers Hyperfast 5A 600V 18ns
-
1N4150W-E3-08
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
Varme dele
- IDT06S60CHKSA1
- GP10A-5016M3/54
- 1N4006GPE-M3/73
- D740N36TXPSA1
- UF4005 BK
- JANS1N6677UR-1
- BA157GP-M3/54
- GP02-40-M3/73
- 1N4004GPE-E3/93
- RU 4DS
- VS-MBRD330TRLPBF
- SK310B/TR13
- SB10-05A3-BT
- DLA11C-TR-E
- GPA804-BP
- 1N5401-AP
- SS32HE3/57T
- SS25HE3/52T
- SS320HE-TP
- RJU6053WDPP-M0#T2
- S3GHE3/57T
- RS3BHE3/9AT
- RGP5020-E3/54
- GPP15M-E3/54
- GI917-E3/54
- FGP30D-E3/73
- MBRD835L
- MR856
- MBRS3201T3
- SIDC53D120H6X1SA3
- VS-MUR1520PBF
- 80EPS08
- S3AB-13
- FR1J-LTP
- D255K06BXPSA1
- STPSC5H12D
- RGF1D-E3/67A
- RB068LAM150TR
- RF01VM2STE-17
- LS103A-GS18