Fabrikant :
Vishay Siliconix
Beskrivelse :
MOSFET P-CH 60V 1.1A 4-DIP
Teknologi :
MOSFET (Metal Oxide)
Afløb til Source Voltage (VDSS) :
60V
Strøm - Kontinuerlig afløb (Id) @ 25 ° C :
1.1A (Ta)
Drevspænding (Maks. Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
500 mOhm @ 660mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Inputkapacitans (Ciss) (Max) @ Vds :
270pF @ 25V
Power Dissipation (Max) :
1.3W (Ta)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandør Device Package :
4-DIP, Hexdip, HVMDIP
Pakke / tilfælde :
4-DIP (0.300", 7.62mm)